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Address:
155 Suhong East Road, Suzhou Industrial Park, Jiangsu Province, China 
WHAT ARE YOU LOOKING FOR?
Silicon carbide as the third generation semiconductor, compared with the first generation semiconductor silicon material has a great advantage in band gap width, with the same performance of silicon carbide device size can be reduced to one tenth of the silicon based device. Compared with the second generation of semiconductor materials indium phosphide, gallium arsenide, etc., more stable wear resistance, more corrosion resistance.
The silicon carbide substrate also needs to be cut, ground and polished.
Our company closely follow the steps of The Times, at present has a silicon carbide polishing slurry prototype, can be tested.
